GB/T 33763-2017
ActiveTest method for dislocation density of sapphire single crystal
蓝宝石单晶位错密度测量方法
Application Summary AI generated
This standard specifies the test method for measuring dislocation density in sapphire single crystals, primarily using chemical etching and optical microscopy. It is applied in the metallurgy and materials science industries for quality control of sapphire substrates used in LEDs, optical windows, and semiconductor wafers. The method ensures consistency in crystal perfection assessment during manufacturing and incoming inspection.
Related Standards
GB/T 19289-2003
Methods of measurement of density,resistivity and stacking factor of electrical steel sheet and strip
GB/T 6524-2003
Metallic powders--Determination of particle size distribution by gravitational sedimentation in a liquid and attenuation measurement
GB/T 19346-2003
Measuring method of magnetic properties at alternative current for amorphous and nanocrystalline soft magnetic alloys
GB/T 2976-2004
Metallic materials--Wire--Wrapping test
GB/T 4160-2004
Steel-strain ageing sensibility test(Charpy impact method)
GB/T 12689.6-2004
The methods for chemical analysis of zinc and zinc alloys--The determination of lead content--The oscillopolarographic method
GB/T 12689.9-2004
The methods for chemical analysis of zinc and zinc alloys--The determination of antimony content--The atomic fluorescence spectrometer and the flame atomic absorption spectrometric method
GB/T 12689.10-2004
The methods for chemical analysis of zinc and zinc alloys--The determination of tin content--The phenylfluorone-cetyltrimethyla-mmonium bromide spectrophotometric method
Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.